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Ion Implantation - Emanuele Rimini
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Emanuele Rimini:

Ion Implantation - nuovo livro

1995, ISBN: 0792395204

Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As … mais…

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Ion Implantation: Basics to Device Fabrication / Emanuele Rimini / Buch / The Springer International Series in Engineering and Computer Science / HC runder Rücken kaschiert / XIII / Englisch / 1994 - Rimini, Emanuele
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Rimini, Emanuele:

Ion Implantation: Basics to Device Fabrication / Emanuele Rimini / Buch / The Springer International Series in Engineering and Computer Science / HC runder Rücken kaschiert / XIII / Englisch / 1994 - encadernada, livro de bolso

1994, ISBN: 9780792395201

[ED: Gebunden], [PU: Springer US], Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the… mais…

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Rimini, Emanuele:
Ion Implantation: Basics to Device Fabrication - encadernada, livro de bolso

1994

ISBN: 9780792395201

Hard cover, New., Sewn binding. Cloth over boards. 393 p. Contains: Unspecified. The Springer International Engineering and Computer Science, 293., New York, NY, [PU: Springer]

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Ion Implantation : Basics to Device Fabrication - Rimini, E.; Rimini, Emanuele (physics Department, University Of Catania, Italy); Rimini, Emanuele
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Rimini, E.; Rimini, Emanuele (physics Department, University Of Catania, Italy); Rimini, Emanuele:
Ion Implantation : Basics to Device Fabrication - encadernada, livro de bolso

1994, ISBN: 0792395204

[EAN: 9780792395201], Nouveau livre, [SC: 14.15], [PU: Springer], Books

NEW BOOK. Custos de envio: EUR 14.15 GreatBookPrices, Columbia, MD, U.S.A. [5352716] [Note: 4 (sur 5)]
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Rimini, Emanuele:
Ion Implantation: Basics to Device Fabrication (the Springer International Series in Engineering and Computer Science) - encadernada, livro de bolso

1994, ISBN: 9780792395201

Hardcover, Nouveau livre, As new., [PU: Springer]

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Ion Implantation: Basics to Device Fabrication

Ion Implantation: Basics to Device Fabrication is a collection of research dealing with several aspects of ion implantation, including basic information on the physics of devices, ion implanters, channeling implants, yield, damage and its annealing, in addition to a host of other topics. Particular attention has been paid to those techniques that provide two-dimensional profiles of damage and of dopants, a careful treatment of silicon based devices, threshold voltage control, shallow junctions, minority carrier lifetime control by metallic ion implants, and high energy implants is given in this work. This book, based on a course preceding the biannual Ion Implantation Technology Conference, is a valuable reference for physicists, chemists, materials scientists, processing, device production, device design, and ion beam engineers interested in any aspect of ion implantation, as well as a secondary text for a graduate course on the subject.

Dados detalhados do livro - Ion Implantation: Basics to Device Fabrication


EAN (ISBN-13): 9780792395201
ISBN (ISBN-10): 0792395204
Livro de capa dura
Livro de bolso
Ano de publicação: 1994
Editor/Editora: Springer
410 Páginas
Peso: 0,771 kg
Língua: eng/Englisch

Livro na base de dados desde 2008-03-18T11:06:10-03:00 (Sao Paulo)
Página de detalhes modificada pela última vez em 2024-01-31T11:30:44-03:00 (Sao Paulo)
Número ISBN/EAN: 9780792395201

Número ISBN - Ortografia alternativa:
0-7923-9520-4, 978-0-7923-9520-1
Ortografia alternativa e termos de pesquisa relacionados:
Autor do livro: rimini, emanuele
Título do livro: ion, basics, rimini, computer science


Dados da editora

Autor: Emanuele Rimini
Título: The Springer International Series in Engineering and Computer Science; Ion Implantation: Basics to Device Fabrication
Editora: Springer; Springer US
393 Páginas
Ano de publicação: 1994-12-31
New York; NY; US
Língua: Inglês
235,39 € (DE)
241,99 € (AT)
260,00 CHF (CH)
Available
XIII, 393 p.

BB; Hardcover, Softcover / Technik/Maschinenbau, Fertigungstechnik; Werkstoffprüfung; Verstehen; basic research; ion; material; radiation; semiconductor; silicon; Characterization and Analytical Technique; Inorganic Chemistry; Nuclear Physics; Anorganische Chemie; Atom- und Molekularphysik; EA; BC

1 Semiconductor Devices.- 1.1 Introduction.- 1.2 Semiconductor Physics.- 1.3 p-n Junction and Diode.- 1.4 Unipolar and Bipolar Transistors.- 1.5 Ion Implantation and Semiconductor Devices.- 1.6 Damage and Yield.- 1.7 Future Trend.- 2 Ion Implanters.- 2.1 Introduction.- 2.2 Ion Sources.- 2.3 High Energy Implanters.- 2.4 Magnetic Analyzer and Beam Transport.- 2.5 Energy Contamination.- 2.6 Scan System and Current Measurement.- 2.7 Wafer Cooling.- 2.8 Wafer Charging.- 2.9 Uniformity Control and Mapping.- 2.10 Contaminants and Yield.- 2.11 Plasma Immersion Ion Implantation.- 3 Range Distribution.- 3.1 Introduction.- 3.2 Elastic Stopping Power.- 3.3 Electronic Energy Loss.- 3.4 Depth Profile of Implanted Ions.- 3.5 Penetration Anomalies.- 3.6 Channeling Implants.- 3.7 Lateral Spreading.- 3.8 Simulation of Range Distribution.- 4 Radiation Damage.- 4.1 Introduction.- 4.2 Collision Cascade.- 4.3 Damage Distribution.- 4.4 Crystalline Defects.- 4.5 Primary Defects.- 4.6 Hot Implants.- 4.7 Ion Beam Induced Enhanced Crystallization.- 4.8 Ion Implantation into Localized Si Areas.- 5 Annealing and Secondary Defects.- 5.1 Introduction.- 5.2 Solid Phase Epitaxial Growth of Amorphous Silicon.- 5.3 Annealing of Low-Dose Heavy - Ion Implant.- 5.4 Regrowth of Amorphous Layer Under a Mask.- 5.5 Annealing of Heavily Disordered Regions.- 5.6 Rapid Thermal Processing.- 5.7 Impurity Diffusion During Annealing.- 5.8 Interaction of Impurities with Ion Implanted Defects.- 5.9 Defect Engineering.- 6 Analytical Techniques.- 6.1 Introduction.- 6.2 Secondary Ion Mass Spectrometry.- 6.3 Spreading Resistance Profilometry: One and Two Dimensional Analyses.- 6.4 Carrier and Mobility Profiles.- 6.5 Rutherford Backscattering and Channeling Effect.- 6.6 Transmission Electron Microscopy.- 7 Silicon Based Devices.- 7.1 Introduction.- 7.2 Threshold Voltage Control in MOSFET.- 7.3 Short Channel Effects.- 7.4 Shallow Junctions.- 7.5 Complementary MOS Devices and Technology.- 7.6 Lifetime Engineering in Power Devices.- 7.7 High Energy Implant Applications.- 7.8 High-Speed Bipolar Transistors.- 8 Ion Implantation in Compound Semi-Conductor and Buried Layer Synthesis.- 8.1 Introduction.- 8.2 Ion Implantation in GaAs.- 8.3 Ion Implantation in InP.- 8.4 Isolation of III-V Semiconductors.- 8.5 Isolation of Superlattice and Quantum Well Structures.- 8.6 Synthesis of Buried Dielectric.- 8.7 Devices in SOI Substrates.- 8.8 Buried Metal Layer Formation.- 8.9 Compound Semiconductor Based Devices.- Selected References.- References.

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