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Semiconductor Equations - Markowich, Peter A.
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Markowich, Peter A.:

Semiconductor Equations - Livro de bolso

2013, ISBN: 9783709174524

Springer, Taschenbuch, Auflage: Softcover reprint of the original 1st ed. 1990, 268 Seiten, Publiziert: 2013-10-04T00:00:01Z, Produktgruppe: Buch, 0.84 kg, Chemie, Naturwissenschaften & T… mais…

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Markowich, Peter A.:

Semiconductor Equations - Livro de bolso

2013, ISBN: 9783709174524

Springer, Taschenbuch, Auflage: Softcover reprint of the original 1st ed. 1990, 268 Seiten, Publiziert: 2013-10-04T00:00:01Z, Produktgruppe: Buch, 0.84 kg, Chemie, Naturwissenschaften & T… mais…

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Markowich, Peter A.", "Ringhofer, Christian A.", "Schmeiser, Christian":
Semiconductor Equations [Soft Cover ] - Livro de bolso

2011

ISBN: 370917452X

[EAN: 9783709174524], Neubuch, [PU: Springer], This item is printed on demand, Books

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Peter A. Markowich:
Semiconductor Equations - Livro de bolso

2011, ISBN: 370917452X

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Markowich, Peter A.:
Semiconductor Equations - Livro de bolso

ISBN: 9783709174524

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Semiconductor Equations
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9783709174524


In recent years the mathematical modeling of charge transport in semi­ conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula­ tion of the electrical behavior of semiconductor devices, are by now mathe­ matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu­ sion model is of a highly specialized nature. It concentrates on the explora­ tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling research lately, since the drift diffusion model does not account well for charge transport in ultra integrated devices. Extensions of the drift diffusion model (so called hydrodynamic models) are under investigation for the modeling of hot electron effects in submicron MOS-transistors, and supercomputer technology has made it possible to employ kinetic models (semiclassical Boltzmann-Poisson and Wigner­ Poisson equations) for the simulation of certain highly integrated devices.

Dados detalhados do livro - Semiconductor Equations


EAN (ISBN-13): 9783709174524
ISBN (ISBN-10): 370917452X
Livro de bolso
Ano de publicação: 2011
Editor/Editora: Springer

Livro na base de dados desde 2014-08-12T07:10:26-03:00 (Sao Paulo)
Página de detalhes modificada pela última vez em 2023-07-30T03:54:30-03:00 (Sao Paulo)
Número ISBN/EAN: 9783709174524

Número ISBN - Ortografia alternativa:
3-7091-7452-X, 978-3-7091-7452-4
Ortografia alternativa e termos de pesquisa relacionados:
Autor do livro: markow, ring, christian schmeiser, schmeißer, ringhofer, peter marko, boltzmann

Dados da editora

Autor: Peter A. Markowich; Christian A. Ringhofer; Christian Schmeiser
Título: Semiconductor Equations
Editora: Springer; Springer Wien
248 Páginas
Ano de publicação: 2011-09-19
Vienna
Impresso / Feito em
Língua: Inglês
106,99 € (DE)
109,99 € (AT)
118,00 CHF (CH)
POD
X, 248 p.

BC; Hardcover, Softcover / Mathematik/Analysis; Mathematische Analysis, allgemein; Verstehen; Boundary value problem; Doping; Leistungsfeldeffekttransistor; Maxwell's equations; Potential; Schrödinger equation; Semiconductor; Thyristor; Transistor; field-effect transistor; magnetic field; metal oxide semiconductur field-effect transistor; model; pin-Diode; stability; Analysis; Classical Electrodynamics; Theoretical, Mathematical and Computational Physics; Mathematical Applications in Chemistry; Computational Intelligence; Electronics and Microelectronics, Instrumentation; Elektrizität, Magnetismus und Elektromagnetismus; Mathematische Physik; Quanten- und theoretische Chemie; Künstliche Intelligenz; Elektronik; BB; EA; BA

1 Kinetic Transport Models for Semiconductors.- 1.1 Introduction.- 1.2 The (Semi-)Classical Liouville Equation.- 1.3 The Boltzmann Equation.- 1.4 The Quantum Liouville Equation.- 1.5 The Quantum Boltzmann Equation.- 1.6 Applications and Extensions.- Problems.- References.- 2 From Kinetic to Fluid Dynamical Models.- 2.1 Introduction.- 2.2 Small Mean Free Path—The Hilbert Expansion.- 2.3 Moment Methods—The Hydrodynamic Model.- 2.4 Heavy Doping Effects—Fermi-Dirac Distributions.- 2.5 High Field Effects—Mobility Models.- 2.6 Recombination-Generation Models.- Problems.- References.- 3 The Drift Diffusion Equations.- 3.1 Introduction.- 3.2 The Stationary Drift Diffusion Equations.- 3.3 Existence and Uniqueness for the Stationary Drift Diffusion Equations.- 3.4 Forward Biased P-N Junctions.- 3.5 Reverse Biased P-N Junctions.- 3.6 Stability and Conditioning for the Stationary Problem.- 3.7 The Transient Problem.- 3.8 The Linearization of the Transient Problem.- 3.9 Existence for the NonlinearProblem.- 3.10 Asymptotic Expansions on the Diffusion Time Scale.- 3.11 Fast Time Scale Expansions.- Problems.- References.- 4 Devices.- 4.1 Introduction.- 4.2 P-N Diode.- 4.3 Bipolar Transistor.- 4.4 PIN-Diode.- 4.5 Thyristor.- 4.6 MIS Diode.- 4.7 MOSFET.- 4.8 Gunn Diode.- Problems.- References.- Physical Constants.- Properties of Si at Room Temperature.
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