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The fabrication of an integrated circuit requires a variety of physical and chemical processes to be performed on a semiconductor substrate. In general, these processes fall into three ca… mais…

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Fundamental Principles of Optical Lithography - nuovo livro

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Chris Mack:
Fundamental Principles of Optical Lithography - nuovo livro

2011, ISBN: 9781119965077

The Science of Microfabrication eBook Chris Mack ePUB, John Wiley & Sons Inc, 10.08.2011, John Wiley & Sons Inc, 2011

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EAN (ISBN-13): 9781119965077
ISBN (ISBN-10): 1119965071
Ano de publicação: 2011
Editor/Editora: John Wiley & Sons

Livro na base de dados desde 2008-10-14T08:04:22-03:00 (Sao Paulo)
Página de detalhes modificada pela última vez em 2022-12-26T13:28:37-03:00 (Sao Paulo)
Número ISBN/EAN: 9781119965077

Número ISBN - Ortografia alternativa:
1-119-96507-1, 978-1-119-96507-7
Ortografia alternativa e termos de pesquisa relacionados:
Autor do livro: john mack
Título do livro: fundamental principles, lithography


Dados da editora

Autor: Chris Mack
Título: Fundamental Principles of Optical Lithography - The Science of Microfabrication
Editora: Wiley; John Wiley & Sons
534 Páginas
Ano de publicação: 2011-08-10
Língua: Inglês
169,99 € (DE)
Not available (reason unspecified)

EA; E101; E-Book; Nonbooks, PBS / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Elektronische Geräte und Materialien; Electrical & Electronics Engineering; Elektrotechnik u. Elektronik; Halbleiter; Halbleiterphysik; Lithographie; Physics; Physik; Semiconductor Physics; Semiconductors; Halbleiter; Halbleiterphysik; BB; BC

Preface. 1. Introduction to Semiconductor Lithography. 1.1 Basics of IC Fabrication. 1.2 Moore's Law and the Semiconductor Industry. 1.3 Lithography Processing. Problems. 2. Aerial Image Formation - The Basics. 2.1 Mathematical Description of Light. 2.2 Basic Imaging Theory. 2.3 Partial Coherence. 2.4 Some Imaging Examples. Problems. 3. Aerial Image Formation - The Details. 3.1 Aberrations. 3.2 Pupil Filters and Lens Apodization. 3.3 Flare. 3.4 Defocus. 3.5 Imaging with Scanners Versus Steppers. 3.6 Vector Nature of Light. 3.7 Immersion Lithography. 3.8 Image Quality. Problems. 4. Imaging in Resist: Standing Waves and SwingCurves. 4.1 Standing Waves. 4.2 Swing Curves. 4.3 Bottom Antirefl ection Coatings. 4.4 Top Antirefl ection Coatings. 4.5 Contrast Enhancement Layer. 4.6 Impact of the Phase of the Substrate Refl ectance. 4.7 Imaging in Resist. 4.8 Defi ning Intensity. Problems. 5. Conventional Resists: Exposure and Bake Chemistry. 5.1 Exposure. 5.2 Post-Apply Bake. 5.3 Post-exposure Bake Diffusion. 5.4 Detailed Bake Temperature Behavior. 5.5 Measuring the ABC Parameters. Problems. 6. Chemically Amplifi ed Resists: Exposure and BakeChemistry. 6.1 Exposure Reaction. 6.2 Chemical Amplifi cation. 6.3 Measuring Chemically Amplifi ed Resist Parameters. 6.4 Stochastic Modeling of Resist Chemistry. Problems. 7. Photoresist Development. 7.1 Kinetics of Development. 7.2 The Development Contrast. 7.3 The Development Path. 7.4 Measuring Development Rates. Problems. 8. Lithographic Control in SemiconductorManufacturing. 8.1 Defi ning Lithographic Quality. 8.2 Critical Dimension Control. 8.3 How to Characterize Critical Dimension Variations. 8.4 Overlay Control. 8.5 The Process Window. 8.6 H-V Bias. 8.7 Mask Error Enhancement Factor (MEEF). 8.8 Line-End Shortening. 8.9 Critical Shape and Edge Placement Errors. 8.10 Pattern Collapse. Problems. 9. Gradient-Based Lithographic Optimization: Using theNormalized Image Log-Slope. 9.1 Lithography as Information Transfer. 9.2 Aerial Image. 9.3 Image in Resist. 9.4 Exposure. 9.5 Post-exposure Bake. 9.6 Develop. 9.7 Resist Profi le Formation. 9.8 Line Edge Roughness. 9.9 Summary. Problems. 10. Resolution Enhancement Technologies. 10.1 Resolution. 10.2 Optical Proximity Correction (OPC). 10.3 Off-Axis Illumination (OAI). 10.4 Phase-Shifting Masks (PSM). 10.5 Natural Resolutions. Problems. Appendix A. Glossary of Microlithographic Terms. Appendix B. Curl, Divergence, Gradient, Laplacian. Appendix C. The Dirac Delta Function. Index.

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