2008, ISBN: 9783639060881

[ED: Taschenbuch / Paperback], [PU: VDM Verlag Dr. Müller], The RC-delay and crosstalk noise of the interconnect system are major problems in high-performance semiconductor chips. The k… mais…

[ED: Taschenbuch / Paperback], [PU: VDM Verlag Dr. Müller], The RC-delay and crosstalk noise of the interconnect system are major problems in high-performance semiconductor chips. The key is reducing the coupling capacitance or the k-value of the insulator between the metal lines by substituting silicon dioxide by low-k materials or by integrating cavities, called air gaps. Here, air gaps fabricated by the selective Ozone-TEOS deposition are considered to reduce the line-to-line capacitance. Different integration schemes were fabricated air gaps requiring an additional lithography in Cu damascene metallization, self-aligned air gaps in Cu and in tungsten metallization, utilizing RIE (reactive ion etch) processing, and air gaps fabricated using non-conformal deposition processes for the insulator in a 90nm Al RIE metallization scheme. Structures were fabricated with and without air gaps to compare the properties and to examine different aspects such as k-value, simulations, capacitance, electrical breakdown, leakage current, electromigration, and self-heating by high current application. The results show very promising electrical properties of air gaps, exhibiting an attractive alternative to low-k materials., DE, [SC: 0.00], Neuware, gewerbliches Angebot, H: 220mm, 160, [GW: 226g], Selbstabholung und Barzahlung, PayPal, offene Rechnung, Banküberweisung, Expédition internationale<

ISBN: 9783639060881

Paperback, [PU: VDM Verlag Dr. Mueller E.K.], The RC-delay and crosstalk noise of the interconnect system are major problems in high-performance semiconductor chips. The key is reducing… mais…

Paperback, [PU: VDM Verlag Dr. Mueller E.K.], The RC-delay and crosstalk noise of the interconnect system are major problems in high-performance semiconductor chips. The key is reducing the coupling capacitance or the k-value of the insulator between the metal lines by substituting silicon dioxide by low-k materials or by integrating cavities, called air gaps. Here, air gaps fabricated by the selective Ozone-TEOS deposition are considered to reduce the line-to-line capacitance. Different integration schemes were fabricated; air gaps requiring an additional lithography in Cu damascene metallization, self-aligned air gaps in Cu and in tungsten metallization, utilizing RIE (reactive ion etch) processing, and air gaps fabricated using non-conformal deposition processes for the insulator in a 90nm Al RIE metallization scheme. Structures were fabricated with and without air gaps to compare the properties and to examine different aspects such as k-value, simulations, capacitance, electrical breakdown, leakage current, electromigration, and self-heating by high current application. The results show very promising electrical properties of air gaps, exhibiting an attractive alternative to low-k materials., Engineering: General<

ISBN: 9783639060881

Paperback, [PU: VDM Verlag Dr. Mueller e.K.], The RC-delay and crosstalk noise of the interconnect system are major problems in high-performance semiconductor chips. The key is reducing… mais…

Paperback, [PU: VDM Verlag Dr. Mueller e.K.], The RC-delay and crosstalk noise of the interconnect system are major problems in high-performance semiconductor chips. The key is reducing the coupling capacitance or the k-value of the insulator between the metal lines by substituting silicon dioxide by low-k materials or by integrating cavities, called air gaps. Here, air gaps fabricated by the selective Ozone-TEOS deposition are considered to reduce the line-to-line capacitance. Different integration schemes were fabricated; air gaps requiring an additional lithography in Cu damascene metallization, self-aligned air gaps in Cu and in tungsten metallization, utilizing RIE (reactive ion etch) processing, and air gaps fabricated using non-conformal deposition processes for the insulator in a 90nm Al RIE metallization scheme. Structures were fabricated with and without air gaps to compare the properties and to examine different aspects such as k-value, simulations, capacitance, electrical breakdown, leakage current, electromigration, and self-heating by high current application. The results show very promising electrical properties of air gaps, exhibiting an attractive alternative to low-k materials., Engineering: General<

ISBN: 9783639060881

[ED: Taschenbuch], [PU: VDM Verlag], Neuware - The RC-delay and crosstalk noise of the interconnect, DE, [SC: 0.00], Neuware, gewerbliches Angebot, 220x150x10 mm, 160, [GW: 255g], PayPal,… mais…

[ED: Taschenbuch], [PU: VDM Verlag], Neuware - The RC-delay and crosstalk noise of the interconnect, DE, [SC: 0.00], Neuware, gewerbliches Angebot, 220x150x10 mm, 160, [GW: 255g], PayPal, offene Rechnung, Banküberweisung, sofortueberweisung.de, Expédition internationale<

ISBN: 9783639060881

Air Gap Structures for Advanced Metallization Schemes,Andreas Stich Trade Books>Trade Paperback>Science>Engineering>Engr Ref, VDM Verlag Dr. Mueller e.K. Core >1