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Ion Implantation and Synthesis of Materials - Michael Nastasi|James W. Mayer
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Michael Nastasi|James W. Mayer:

Ion Implantation and Synthesis of Materials - Livro de bolso

2010, ISBN: 3642062598

[EAN: 9783642062599], Neubuch, [PU: Springer Berlin Heidelberg], DIFFUSION DOPING IMPLANTEDSHALLOWJUNCTIONS IONIMPLANTATION IONRANGES ION-MODIFIEDMATERIALS SLICINGSILICON CRYSTAL DISTRIBU… mais…

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Ion Implantation and Synthesis of Materials - Mayer, James W.; Nastasi, Michael
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Mayer, James W.; Nastasi, Michael:

Ion Implantation and Synthesis of Materials - Livro de bolso

2010, ISBN: 3642062598

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Softcover reprint of hardcover 1st ed. 2006 Kartoniert / Broschiert Materialwissenschaft / Aggregatzustände, Teilchen- und Hochenergiephysik, Physikalische Chemie, Elektronische Geräte … mais…

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Michael Nastasi James W. Mayer:
Ion Implantation and Synthesis of Materials - primeira edição

2010

ISBN: 9783642062599

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Nastasi, Michael:
Ion Implantation and Synthesis of Materials - Livro de bolso

2010, ISBN: 9783642062599

Mitwirkende: Mayer, James W. Springer, Taschenbuch, Auflage: Softcover reprint of hardcover 1st ed. 2006, 280 Seiten, Publiziert: 2010-02-12T00:00:01Z, Produktgruppe: Buch, Hersteller-Nr.… mais…

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James W. Mayer/ Michael Nastasi:
Ion Implantation and Synthesis of Materials - Livro de bolso

2006, ISBN: 9783642062599

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Ion Implantation and Synthesis of Materials
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9783642062599


Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.

Dados detalhados do livro - Ion Implantation and Synthesis of Materials


EAN (ISBN-13): 9783642062599
ISBN (ISBN-10): 3642062598
Livro de capa dura
Livro de bolso
Ano de publicação: 2010
Editor/Editora: Springer Berlin Heidelberg
280 Páginas
Peso: 0,427 kg
Língua: eng/Englisch

Livro na base de dados desde 2011-05-17T19:41:30-03:00 (Sao Paulo)
Página de detalhes modificada pela última vez em 2023-01-25T13:23:33-03:00 (Sao Paulo)
Número ISBN/EAN: 9783642062599

Número ISBN - Ortografia alternativa:
3-642-06259-8, 978-3-642-06259-9
Ortografia alternativa e termos de pesquisa relacionados:
Autor do livro: michael nastasi, michael mayer, michael may, michael nast, james michael
Título do livro: synthesis, ion

Dados da editora

Autor: Michael Nastasi; James W. Mayer
Título: Ion Implantation and Synthesis of Materials
Editora: Springer; Springer Berlin
263 Páginas
Ano de publicação: 2010-02-12
Berlin; Heidelberg; DE
Impresso / Feito em
Língua: Inglês
106,99 € (DE)
109,99 € (AT)
118,00 CHF (CH)
POD
XIV, 263 p. 131 illus.

BC; Hardcover, Softcover / Physik, Astronomie/Atomphysik, Kernphysik; Teilchen- und Hochenergiephysik; Verstehen; Diffusion; Doping; Implanted shallow junctions; Ion implantation; Ion ranges; Ion-modified materials; Slicing silicon; crystal; distribution; materials properties; materials science; Accelerator Physics; Condensed Matter Physics; Optical Materials; Characterization and Analytical Technique; Physical Chemistry; Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik); Technische Anwendung von elektronischen, magnetischen, optischen Materialien; Werkstoffprüfung; Physikalische Chemie; BB

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.
Presents the basics and current state of the art in the field of ion implantation-based materials physics Includes supplementary material: sn.pub/extras
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