2016, ISBN: 9783662496817
[ED: Hardcover], [PU: Springer / Springer Berlin Heidelberg / Springer, Berlin], This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFE… mais…
booklooker.de |
ISBN: 9783662496817
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co… mais…
BarnesandNoble.com new in stock. Custos de envio:zzgl. Versandkosten., mais custos de envio Details... |
ISBN: 9783662496817
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co… mais…
Springer.com Nr. 978-3-662-49681-7. Custos de envio:Worldwide free shipping, , DE. (EUR 0.00) Details... |
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices (Springer Theses) - primeira edição
2016, ISBN: 9783662496817
Edição encadernada
Springer, Gebundene Ausgabe, Auflage: 1st ed. 2016, 73 Seiten, Publiziert: 2016-06-22T00:00:01Z, Produktgruppe: Buch, Hersteller-Nr.: 9783662496817, 1 kg, Chemie, Naturwissenschaften & Te… mais…
amazon.de ausverkauf Custos de envio:Auf Lager. Die angegebenen Versandkosten können von den tatsächlichen Kosten abweichen. (EUR 3.00) Details... |
2016, ISBN: 9783662496817
[PU: Springer Berlin], Gepflegter, sauberer Zustand. 26476376/2, DE, [SC: 0.00], gebraucht; sehr gut, gewerbliches Angebot, 1st ed. 2016, Banküberweisung, Kreditkarte, PayPal, Internation… mais…
booklooker.de |
2016, ISBN: 9783662496817
[ED: Hardcover], [PU: Springer / Springer Berlin Heidelberg / Springer, Berlin], This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFE… mais…
ISBN: 9783662496817
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co… mais…
ISBN: 9783662496817
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co… mais…
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices (Springer Theses) - primeira edição
2016, ISBN: 9783662496817
Edição encadernada
Springer, Gebundene Ausgabe, Auflage: 1st ed. 2016, 73 Seiten, Publiziert: 2016-06-22T00:00:01Z, Produktgruppe: Buch, Hersteller-Nr.: 9783662496817, 1 kg, Chemie, Naturwissenschaften & Te… mais…
2016, ISBN: 9783662496817
[PU: Springer Berlin], Gepflegter, sauberer Zustand. 26476376/2, DE, [SC: 0.00], gebraucht; sehr gut, gewerbliches Angebot, 1st ed. 2016, Banküberweisung, Kreditkarte, PayPal, Internation… mais…
Dados bibliográficos do melhor livro correspondente
Autor: | |
Título: | |
Número ISBN: |
Dados detalhados do livro - The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices (Springer Theses)
EAN (ISBN-13): 9783662496817
ISBN (ISBN-10): 366249681X
Livro de capa dura
Ano de publicação: 1
Editor/Editora: Springer
Livro na base de dados desde 2016-03-08T16:29:30-03:00 (Sao Paulo)
Página de detalhes modificada pela última vez em 2024-04-10T17:42:19-03:00 (Sao Paulo)
Número ISBN/EAN: 9783662496817
Número ISBN - Ortografia alternativa:
3-662-49681-X, 978-3-662-49681-7
Ortografia alternativa e termos de pesquisa relacionados:
Autor do livro: schottky
Título do livro: the source, mos, germanium, springer theses
Dados da editora
Autor: Zhiqiang Li
Título: Springer Theses; The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
Editora: Springer; Springer Berlin
59 Páginas
Ano de publicação: 2016-06-22
Berlin; Heidelberg; DE
Impresso / Feito em
Língua: Inglês
53,49 € (DE)
54,99 € (AT)
59,00 CHF (CH)
POD
XIV, 59 p. 52 illus., 49 illus. in color.
BB; Hardcover, Softcover / Physik, Astronomie/Atomphysik, Kernphysik; Elektronische Geräte und Materialien; Verstehen; Elektrotechnik, Elektronik; Contact resistance; Thermal stability; Germanium-based MOSFET; Dopant segregation; Source and drain; Nickel germanide; Dopant activation; MOS device; Semiconductors; Electronic Circuits and Systems; Nanophysics; Condensed Matter Physics; Schaltkreise und Komponenten (Bauteile); Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik); Nanowissenschaften; EA; BC
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.Nominated as an Excellent Doctoral Dissertation by Peking University in 2014 Proposes innovative methods for addressing the challenges in the source/drain engineering of germanium nMOSFETs Experimentally demonstrates the methods’ effectiveness with regard to reducing parasitic resistance in the source/drain of germanium nMOSFETs Includes supplementary material: sn.pub/extras
Outros livros adicionais, que poderiam ser muito similares com este livro:
Último livro semelhante:
9783662570265 The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices (Li, Zhiqiang)
< Para arquivar...