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4h-Sic Schottky Barrier Diodes and Junction Field Effect Transistors Denis Perrone Author
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4h-Sic Schottky Barrier Diodes and Junction Field Effect Transistors Denis Perrone Author - nuovo livro

ISBN: 9783838380643

Silicon Carbide (SiC) is a semiconductor employed for the fabrication of high - power and high - frequency electronic devices, with lower power losses and smaller size than their Si or Ga… mais…

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4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors: Process and characterization techniques - Perrone, Denis
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4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors: Process and characterization techniques - Livro de bolso

2010, ISBN: 9783838380643

LAP LAMBERT Academic Publishing, Taschenbuch, 116 Seiten, Publiziert: 2010-07-26T00:00:01Z, Produktgruppe: Buch, 0.18 kg, Elektrotechnik, Ingenieurwissenschaft & Technik, Naturwissenschaf… mais…

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4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors: Process and characterization techniques - Perrone, Denis
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Perrone, Denis:
4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors: Process and characterization techniques - Livro de bolso

2010

ISBN: 9783838380643

LAP LAMBERT Academic Publishing, Taschenbuch, 116 Seiten, Publiziert: 2010-07-26T00:00:01Z, Produktgruppe: Buch, 0.18 kg, Elektrotechnik, Ingenieurwissenschaft & Technik, Naturwissenschaf… mais…

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Perrone, Denis:
4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors: Process and characterization techniques - Livro de bolso

2010, ISBN: 9783838380643

LAP LAMBERT Academic Publishing, Paperback, 116 Seiten, Publiziert: 2010-07-26T00:00:01Z, Produktgruppe: Book, 0.18 kg, Electronics Engineering, Electronics & Communications Engineering, … mais…

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Perrone, Denis:
4hsic Schottky Barrier Diodes and Junction Field Effect Transistors Process and Characterization Techniques - Livro de bolso

2007, ISBN: 9783838380643

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4h-Sic Schottky Barrier Diodes and Junction Field Effect Transistors Denis Perrone Author
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9783838380643


Silicon Carbide (SiC) is a semiconductor employed for the fabrication of high - power and high - frequency electronic devices, with lower power losses and smaller size than their Si or GaAs counterparts. Recently, SiC substrates with a very low defect density, and with a good control on the doping characteristics became commercially available. Due to these technological improvements, the polytype 4H can be exploited in all its potential in order to fabricate Schottky Barrier Diodes (SBDs) and Junction Field Effect Transistors (JFETs). SiC SBDs with 600 V blocking voltage capabilities have been yet commercialized. This device can provide theoretical blocking voltage values as high as 3300 V with low leakage currents, well beyond the performances of the Si - based counterpart. In particular, SiC - based transistor JFETs can be designed with a vertical structure using the 4H polytype, because of the high values of the on - axis mobility. This book provides to the researchers in the field of SiC power devices an introduction to the process techniques commonly employed for the fabrication and characterization of SiC SBDs and JFETs.

Dados detalhados do livro - 4h-Sic Schottky Barrier Diodes and Junction Field Effect Transistors Denis Perrone Author


EAN (ISBN-13): 9783838380643
ISBN (ISBN-10): 3838380649
Livro de capa dura
Livro de bolso
Ano de publicação: 2010
Editor/Editora: LAP Lambert Academic Publishing Core >1 >T
116 Páginas
Peso: 0,189 kg
Língua: eng/Englisch

Livro na base de dados desde 2008-07-30T07:01:24-03:00 (Sao Paulo)
Página de detalhes modificada pela última vez em 2024-04-10T15:10:05-03:00 (Sao Paulo)
Número ISBN/EAN: 9783838380643

Número ISBN - Ortografia alternativa:
3-8383-8064-9, 978-3-8383-8064-3
Ortografia alternativa e termos de pesquisa relacionados:
Autor do livro: perrone, denis den, dénis, schottky
Título do livro: sic diodes, sic non, transistors

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